? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c70v v dgr t j = 25 c to 150 c; r gs = 1 m ? 70 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c (mosfet chip capability) 180 a i d(rms) external lead (current limit) 76 a i dm t c = 25 c, note 1 720 a i ar t c = 25 c 180 a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.9/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 70 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 6 m ? note 2 single mosfet die features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z synchronous rectification z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls z low voltage relays advantages z plus 247 tm package for clip or spring mounting z space savings z high power density hiperfet tm power mosfets ds98556c(01/03) plus 247 tm g d d (tab) g = gate d = drain s = source tab = drain ixfk 180n07 v dss = 70 v ixfx 180n07 i d25 = 180 a r ds(on) = 6 m ? ? ? ? ? t rr 250 ns s g d (tab) to-264 aa (ixfk) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60a note 2 55 90 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 4600 pf c rss 2550 pf t d(on) 65 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 90 ns t d(off) r g = 1 ? (external), 140 n s t f 55 ns q g(on) 420 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 220 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 180 a i sm repetitive; 720 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, note 1 1.3 v t rr 250 ns q rm 1.2 c i rm 10 a i f = 50a,-di/dt = 100 a/ s, v r = 50 v dim. m illimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % ixfk 180n07 ixfx 180n07 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
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